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| Datasheet File OCR Text: |
| CHT127ZPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t pnp silicon transistor voltage 100 volts current 5 ampere a p p l i c a t i o n f e a t u r e * suitable for high packing density. construction * pnp silicon transistor * t e l e p h o n y a n d p r o f e r s s i o n a l c o m m u n c t i o n e q u i p m e n t . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2 0 04 -7 * high saturation current capability. c i r c u i t l i m i t i n g v a l u e s i n a c c o r d a n c e w i t h t h e a b s o l u t e m a x i m u m r a t i n g s y s t e m ( i e c 6 0 1 3 4 ) . n o t e 1 . t r a n s i s t o r m o u n t e d o n a n f r 4 p r i n t e d - c i r c u i t b o a r d . s y m b o l p a r a m e t e r c o n d i t i o n s m i n . m a x . u n i t v c b o c o l l e c t o r - b a s e v o l t a g e o p e n e m i t t e r - -100 v v c e o c o l l e c t o r - e m i t t e r v o l t a g e o p e n b a s e - -100 v v v e b o e m i t t e r - b a s e v o l t a g e o p e n c o l l e c t o r -5.0 i c collector current (dc) - -5.0 a p tot total po w er dissipation t amb 25 c; note 1 - 2 w t stg stor age temper ature - 65 +150 c t j junction temper ature - 150 c t a m b o p e r a t i n g a m b i e n t t e m p e r a t u r e - 6 5 + 1 5 0 c - * small flat package. ( sc-73/sot-223 ) d i m e n s i o n s i n m i l l i m e t e r s s c - 7 3 / s o t - 2 2 3 s c - 7 3 / s o t - 2 2 3 0 . 9 0 + 0 . 0 5 6 . 5 0 + 0 . 2 0 1 . 6 5 + 0 . 1 5 0 . 0 1 ~ 0 . 1 0 3 . 5 + 0 . 2 2 . 0 + 0 . 3 7 . 0 + 0 . 3 0 . 7 0 + 0 . 1 0 0 . 7 0 + 0 . 1 0 0 . 7 0 + 0 . 1 0 2 . 3 0 + 0 . 1 4 . 6 0 + 0 . 1 0 . 2 7 + 0 . 0 5 3 . 0 0 + 0 . 1 0 2 . 0 + 0 . 3 0 . 9 + 0 . 2 1 2 3 1 b a s e 3 c o l l e c t o r ( h e a t s i n k ) 2 e m i t t e r icm peak collector current a -8.0 - (1) (2) (3) e c b marking * zbp
chara cteristics t amb =2 5 c unless otherwise specited. r a t i n g c h a r a c t e r i s t i c c u r v e s ( c ht127zpt ) = -3v - i c =--3.0a; vce=-3.0v i c =--5.0a; i b = -20 ma - symbol v p arameter -2.5 conditions min. max. unit i ceo collector cut-off current v ce = -50 v - -500 ua i c = -3.0a; v ce = -3v 1000 h fe dc current gain i c = -500 ma; v ce 1000 - cesat iebo collector-emitter satur emitter cut-off current ation v v veb=-5.0v oltage - i -2.0 c ma = -3.0 a; i b =-12m a - -2.0 - -4.0 v v beon base-emitter satur ation v oltage c ob collector capacitance i e =i e = 0; v cb =-10v ; f=1m h z 3 00 pf f t tr ansition frequency i c = -3.0a; v ce = -4v ; f = 1.0 mhz 4.0 mhz v - icbo collector cut-off current v cb = -100 v - -200 ua - |
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